arXiv ScienceSearch

arXiv · 1512.07878

Tunable Electronic Band Structures and Zero-Energy Modes of Heterosubstrate-induced Graphene Superlattices

Abstract

We propose a tunable electronic band gap and zero-energy modes in periodic heterosubstrate-induced graphene superlattices. Interestingly, there is an approximate linear relation between the band gap and the proportion of inhomogeneous substrate (i.e., percentages of different components) in the proposed superlattice, and the effect of structural disorder on the relation is discussed. In inhomogeneous substrate with equal widths, zero-energy states emerge in the form of Dirac points by using asymmetric potentials, and the positions of Dirac points are addressed analytically. Further, the Dirac point exists at $\mathbf{k}=\mathbf{0}$ only for specific potentials; every time it appears, the group velocity vanishes in $k_y$ direction and the resonance occurs. For general cases that inhomogeneous substrate with unequal widths, a part of zero-energy states are described analytically, and differently, they are not always Dirac points. Our prediction may be realized on the heterosubstrate such as SiO$_2$/BN type.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Xiong Fan, Wenjun Huang, Tianxing Ma, Li-Gang Wang. 2016-04-28. Tunable Electronic Band Structures and Zero-Energy Modes of Heterosubstrate-induced Graphene Superlattices. https://doi.org/10.1103/physrevb.93.165137

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Cryothermal Measurements of Variable-Emittance Coatings with Lower Phase Transition Temperatures for Space Thermal Control

Space thermal control is critically important to ensure proper operation of on-board equipment in a regulated temperature range. Passive thermal control with variable-emittance coatings (VECs) could help save power consumption in a dynamically changing space thermal environment. Vanadium dioxide (VO2) based VECs have been studied for space thermal control but its intrinsic phase transition around 68°C limits its wider space applications where lower temperature ranges are expected. In this work, we experimentally demonstrate enhanced radiative heat dissipation in space-like thermal environment via cryothermal measurements with VECs of undoped and tungsten doped VO2. The fabricated undoped VEC exhibits a large emittance change of 0.6 across the phase transition, while the 1 at.% tungsten doped one shows an appreciable emittance variable of 0.4 with phase transition temperature lowered by 25°C. A vacuum cryothermal setup is developed with a liquid nitrogen cooled coldfinger to mimic cold space thermal background and a custom-designed sample mount suspended by nylon wires. After careful calibration and validation, greatly enhanced radiative heat dissipation upon VO2 phase transition up to 3.5 times with transition temperature lowered by 25°C from 1 at.% tungsten doping is clearly observed from the cryothermal tests. In the actual space thermal environment, radiative heat flux could further increase across phase transition from 160 W/m2 to 650 W/m2 with undoped VO2 coating from 55°C to 80°C, and from 175 W/m2 to 493 W/m2 with 1 at.% tungsten doped VEC from 30°C to 55°C.

cond-mat.mtrl-sci

Time- and Frequency-Resolved Observation of Inverse Orbital Hall Effect in Gallium Nitride via Terahertz Polarimetry

Orbitronics has attracted significant attention as a platform for information storage and processing that exploits the orbital angular momentum (OAM) of electrons without the need for spin-orbit coupling. However, experimental evaluation of OAM-charge interconversion remains a challenge and the results are often controversial due to the coexistence of bulk and interfacial contributions and the complexity in sample structures. Here, using circularly polarized light pulses and terahertz (THz) polarimetry, we developed a non-contact method to observe the inverse orbital Hall effect as a bulk response within a single material without employing heterostructure samples. In a semiconductor GaN, we directly captured the OAM-to-charge current conversion of holes in the THz frequency range. By analyzing the sharp frequency dependence of the Hall conductivity, we disentangled the competing microscopic mechanisms and revealed the dominant role of extrinsic contributions to the orbital Hall effect in the dc limit. By contrast, the Hall conductivity at THz frequencies above the impurity scattering rate is attributed to the intrinsic Berry-curvature mechanism,allowing a quantitative comparison with the microscopic theory. Furthermore, the ultrafast dynamics of the inverse orbital Hall signal directly revealed sub-picosecond OAM relaxation of holes, comparable to that of phonon-mediated thermalization. The quantitative argument based on theoretical calculations suggested the existence of an even faster decay channel due to momentum redistribution by acoustic phonons, suggesting a sub-nanometer-scale OAM relaxation length. Our results provide comprehensive and crucial insights into OAM transport and establish an ultrafast, contact-free approach for investigating OAM-to-charge conversion.

cond-mat.mtrl-sci

Interfacial Engineering Enabled High-Resolution Stretchable Metal-Level Conductive Lines and Transparent Conductor

As stretchable electronics advance toward higher integration density and finer feature sizes, stretchable conductors, which serve as the architectural backbone of these electronics, must be scaled down accordingly. However, achieving both high stretchability and high electrical conductivity at high resolution remains a challenge using existing conductive materials. Here, through material design and interfacial engineering, we develop a thiol-functionalized conducting polymer/gold hybrid stack that can be patterned down to 4 micrometer linewidths using standard photolithography, while maintaining high stretchability, metal-like conductivity (>40,000 S/cm), and environmental stability. Leveraging this capability, we demonstrate grid-based stretchable transparent electrodes that surpass the figure-of-merit of indium tin oxide, as well as a 1000-pixel-per-inch image interconnected with stretchable lines. This work helps to broaden the scope of next-generation functional soft electronics, including e-skins and bioelectronics.

cond-mat.mtrl-sci