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arXiv · 1512.05022

Spin transport in molybdenum disulfide multilayer channel

S. H. Liang·Y. Lu·B. S. Tao·S. Mc-Murtry·G. Wang·X. Marie·P. Renucci·H. Jaffrès·F. Montaigne·D. Lacour·J. -M. George·S. Petit-Watelot·M. Hehn·A. Djeffal·S. Mangin
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Abstract

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

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S. H. Liang, Y. Lu, B. S. Tao, S. Mc-Murtry, G. Wang, X. Marie, P. Renucci, H. Jaffrès, F. Montaigne, D. Lacour, J. -M. George, S. Petit-Watelot, M. Hehn, A. Djeffal, S. Mangin. 2015-12-16. Spin transport in molybdenum disulfide multilayer channel. https://arxiv.org/abs/1512.05022

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