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arXiv · 1511.08701

Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

B. Zheng·A. F. Croxall·J. Waldie·K. Das Gupta·F. Sfigakis·I. Farrer·H. E. Beere·D. A. Ritchie
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Abstract

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.

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B. Zheng, A. F. Croxall, J. Waldie, K. Das Gupta, F. Sfigakis, I. Farrer, H. E. Beere, D. A. Ritchie. 2016-01-03. Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device. https://doi.org/10.1063/1.4941760

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