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arXiv · 1511.08601

Ballistic transport exceeding 28 μm in CVD grown graphene

Luca Banszerus·Michael Schmitz·Stephan Engels·Matthias Goldsche·Kenji Watanabe·Takashi Taniguchi·Bernd Beschoten·Christoph Stampfer
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Abstract

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

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Luca Banszerus, Michael Schmitz, Stephan Engels, Matthias Goldsche, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer. 2016-01-12. Ballistic transport exceeding 28 μm in CVD grown graphene. https://doi.org/10.1021/acs.nanolett.5b04840

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