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arXiv · 1511.08003

Electrical control of g-factors in a few-hole silicon nanowire MOSFET

B. Voisin·R. Maurand·S. Barraud·M. Vinet·X. Jehl·M. Sanquer·J. Renard·S. De Franceschi
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Abstract

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz.

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B. Voisin, R. Maurand, S. Barraud, M. Vinet, X. Jehl, M. Sanquer, J. Renard, S. De Franceschi. 2015-11-25. Electrical control of g-factors in a few-hole silicon nanowire MOSFET. https://doi.org/10.1021/acs.nanolett.5b02920

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