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arXiv · 1511.06505

The effect of anode emitter injection capability on characteristics of hybrid SIT-MOS transistors

A. S. Kyuregyan·A. V. Gorbatyuk·B. V. Ivanov
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Abstract

The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated using two-dimensional numerical simulation. It has been shown that all of these methods proposed previously for optimization of insulated-gate bipolar transistor (IGBT) are physically equivalent and makes it possible to reduce turn-off energy losses $E_{off}$ in HSMT by 30-40%. Importantly that energy $E_{off}$ in optimized HSMT appears to be 15-35% less than in equivalent trench IGBT under other equal conditions.

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A. S. Kyuregyan, A. V. Gorbatyuk, B. V. Ivanov. 2015-11-20. The effect of anode emitter injection capability on characteristics of hybrid SIT-MOS transistors. https://doi.org/10.1134/s1063782616070137

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