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arXiv · 1511.04438

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

Sanyam Bajaj·Fatih Akyol·Sriram Krishnamoorthy·Ting-Hsiang Hung·Siddharth Rajan
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Abstract

A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.

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Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Ting-Hsiang Hung, Siddharth Rajan. 2015-11-12. Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer. https://arxiv.org/abs/1511.04438

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