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arXiv · 1510.06889

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

Joshua O. Island·Robert Biele·Mariam Barawi·Jose M. Clamagirand·Jose R. Ares·Carlos Sanchez·Herre S. J. van der Zant·Isabel J. Ferrer·Roberto D'Agosta·Andres Castellanos-Gomez
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Abstract

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance.

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Joshua O. Island, Robert Biele, Mariam Barawi, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Isabel J. Ferrer, Roberto D'Agosta, Andres Castellanos-Gomez. 2016-04-16. Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties. https://doi.org/10.1038/srep22214

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