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arXiv · 1510.06524

Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

Takayuki Tahara·Hayato Koike·Makoto Kameno·Yuichiro Ando·Kazuhito Tanaka·Shinji Miwa·Yoshishige Suzuki·Masashi Shiraishi
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Abstract

We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.

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Takayuki Tahara, Hayato Koike, Makoto Kameno, Yuichiro Ando, Kazuhito Tanaka, Shinji Miwa, Yoshishige Suzuki, Masashi Shiraishi. 2015-10-22. Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio. https://arxiv.org/abs/1510.06524

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