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arXiv · 1510.02909

Some aspects of the field evaporation behaviour of GaSb

Abstract

In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX series alloy and pure W, studied under closely related experimental conditions in the same atom probe instrument. It is proposed that the complex behaviour of GaSb originates from a combination of spatially correlated evaporation events and the subsequent field induced dissociation of cluster ions, the latter contributing to inaccuracies in the overall atom probe composition determination for this material.

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Michael Müller, David W. Saxey, George D. W. Smith, Baptiste Gault. 2015-10-10. Some aspects of the field evaporation behaviour of GaSb. https://doi.org/10.1016/j.ultramic.2010.11.019

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