Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

L. Nádvorník; P. Němec; T. Janda; K. Olejník; V. Novák; V. Skoromets; H. Němec; P. Kužel; F. Trojánek; T. Jungwirth; J. Wunderlich

doi:10.1038/srep22901

arXiv · 1510.01978

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

L. Nádvorník·P. Němec·T. Janda·K. Olejník·V. Novák·V. Skoromets·H. Němec·P. Kužel·F. Trojánek·T. Jungwirth·J. Wunderlich

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Abstract

The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate doping, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.

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L. Nádvorník, P. Němec, T. Janda, K. Olejník, V. Novák, V. Skoromets, H. Němec, P. Kužel, F. Trojánek, T. Jungwirth, J. Wunderlich. 2015-10-07. Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer. https://doi.org/10.1038/srep22901

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