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arXiv · 1509.04137

Point contacts in encapsulated graphene

Clevin Handschin·Balint Fülöp·Péter Makk·Sofya Blanter·Markus Weiss·K. Watanabe·T. Taniguchi·Szabolcs Csonka·Christian Schönenberger
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Abstract

We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2 and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contacts. The measured contact resistances are 0.5-1.5 k$\Omega$ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic fields, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.

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Clevin Handschin, Balint Fülöp, Péter Makk, Sofya Blanter, Markus Weiss, K. Watanabe, T. Taniguchi, Szabolcs Csonka, Christian Schönenberger. 2015-09-14. Point contacts in encapsulated graphene. https://doi.org/10.1063/1.4935032

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