arXiv Science⌕ Search

arXiv · 1509.00868

Noise and current correlations in tunnel junctions of Quantum Spin Hall edge states

Abstract

The edge channels of two-dimensional topological systems are protected from elastic reflection and are noiseless at low temperature. Yet, noise and cross-correlations can be induced when electron waves partly transmit to the opposite edge via tunneling through a constriction. In particular, in a quantum spin Hall (QSH) system tunnelling occurs via both spin-preserving ($p$) and spin-flipping ($f$) processes, each fulfilling time-reversal symmetry. We investigate the current correlations of a four-terminal QSH setup in the presence of a tunneling region, both at equilibrium and out-of-equilibrium. We find that, although $p$ and $f$ processes do not commute and the generic current correlation depends on both, under appropriate conditions a direct detection of two types of partition noise is possible. In particular, while the spin-preserving partitioning can be probed for any arbitrary tunnel junction with a specific configuration of terminal biases, the spin-flipping partitioning can be directly detected only under suitably designed setups and conditions. We describe two setups where these conditions can be fulfilled, and both types of partitioning can be detected and controlled.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Fabrizio Dolcini. 2015-10-19. Noise and current correlations in tunnel junctions of Quantum Spin Hall edge states. https://doi.org/10.1103/physrevb.92.155421

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Tunneling Dynamics and Time Delay in Electron Transport through Time-Dependent Barriers with Finite-Bandwidth Reservoirs

We study a model system consisting of a tunneling barrier driven by an external harmonic field and coupled to two leads with finite bandwidth. Avoiding Floquet expansions, we derive simple expressions for the time-dependent tunneling current in the adiabatic regime. Our approach relates the barrier modulation to a measurable time delay in the steady-state periodic current. It provides a physically consistent definition of the tunneling time inside the barrier by subtracting the time delay associated with the leads from the total time delay. We find that the tunneling time always vanishes for wide/high barriers. Remarkably, the time delay persists even when the barrier becomes static, i.e., in the limit where the modulation frequency vanishes. This indicates that the time delay obtained through the introduction of an external periodic perturbation actually reflects an intrinsic property of the tunneling dynamics, rather than an effect of the external drive or of a particular system. We apply our results to the analysis of tunneling times in optical experiments and find good agreement with the experimental data.

cond-mat.mes-hall↗

Fully gapped superconductivity in magic-angle graphene Cooper-pair islands

The mechanism behind superconductivity in magic-angle graphene systems remains an open question. Recent tunnelling and superfluid stiffness measurements have suggested a nodal superconducting gap, but these probes are typically applied to large-area devices, where twist-angle inhomogeneity and disorder can hinder resolving the intrinsic superconducting spectrum. Here we introduce quantum dots in magic-angle twisted bilayer graphene and access a regime where gate-tunable superconductivity competes with strong Coulomb repulsion upon adding an additional carrier to the island. The islands exhibit $2e$-periodic Coulomb blockade, revealing a well-defined quasiparticle gap in the island spectrum, inconsistent with the presence of nodes in the order parameter. Within the same device, we also realize coupled superconducting islands and proximitized quantum dots, establishing a monolithic platform for hybrid dot devices. Our results point to a nodeless quasiparticle gap in moiré graphene and demonstrate the potential of mesoscopic hybrid structures to probe their correlated phases.

cond-mat.mes-hall↗

Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC

We report the experimental observation of discrete ferroelectric switching down to 0.475 nm x 0.475 nm in HfO2-based ferroelectrics using correlated STEM electron beam induced current (EBIC) imaging and nanoscale voltage pulsing. These high-resolution measurements reveal single-domain switching events characterized by abrupt, bi-state transitions with no intermediate polarization states. By mapping polarization-voltage behavior and switching kinetics across thousands of domains, we extract spatially resolved switching thresholds (Emin), switching speeds (tsw), and remanent polarization (2Pr), uncovering robust scaling trends. Larger domains exhibit nearly twice the polarization and faster switching despite higher Emin, while smaller domains switch more slowly at the same field. Sub-domain imaging enables quantification of variation scaling: polarization variation increases linearly logarithmically with area, with inter-domain variation dominating intra-domain variation. Importantly, we show that multi-bit operation arises from the statistical distribution of domain-level switching, rather than partial polarization, enabling distinct and reliable states in devices as small as 0.01 um2. These findings provide a foundational experimental framework for designing scalable, multi-bit ferroelectric memory based on grain- and domain-level heterogeneity.

cond-mat.mes-hall↗