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arXiv · 1508.04990

Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene

V. Wang·Y. C. Liu·Y. Kawazoe·W. T. Geng
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Abstract

Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% along zigzag direction. A semi-empirical interlayer coupling model is proposed, which can well reproduce the evolution of valence band-edges obtained by first-principles calculations. We conclude that the interlayer coupling plays a dominated role in the evolution of the band-edges via decreasing both band gap and carrier effective masses with the increase of phosphorene thickness. A scrutiny of the orbital-decomposed band structure provides a better understanding of the upward shift of valence band maximum surpassing that of conduction band minimum.

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V. Wang, Y. C. Liu, Y. Kawazoe, W. T. Geng. 2016-01-27. Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene. https://doi.org/10.1021/acs.jpclett.5b02047

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