arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · 1508.03068

Electrical control of the valley Hall effect in bilayer MoS2 transistors

Jieun Lee·Kin Fai Mak·Jie Shan
View original source ↗Read source document ↗Export metadata ↓

Abstract

The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and generation of the valley current through the valley Hall effect in monolayer MoS2 have shown the potential of two-dimensional semiconductor transition metal dichalcogenides for valley based electronic and optoelectronic applications. The valley Hall conductivity in monolayer MoS2, a non-centrosymmetric crystal, however, cannot be easily tuned, presenting a challenge for valley-based applications. Here we report the control of the valley Hall effect in bilayer MoS2 transistors through a gate. The inversion symmetry present in bilayer MoS2 was broken by the gate applied electric field perpendicular to the plane. The valley polarization near the edges of the device channels induced by the longitudinal electrical current was imaged by use of Kerr rotation microscopy. The polarization is out-of-plane, has opposite sign for the two edges, and is strongly dependent on the gate voltage. The observation is consistent with the symmetry dependent Berry curvature and valley Hall conductivity in bilayer MoS2. Our results are another step towards information processing based on the valley degree of freedom.

Explore related subjects

cond-mat.mes-hall

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Jieun Lee, Kin Fai Mak, Jie Shan. 2015-08-12. Electrical control of the valley Hall effect in bilayer MoS2 transistors. https://doi.org/10.1038/nnano.2015.337

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Inverse Purcell Suppression of Decoherence in Majorana Qubits via Environmental Engineering

We show that the electromagnetic or phononic environment of a topological quantum device can be engineered to actively suppress decoherence. For a Majorana qubit in a superconducting wire, the exponentially small splitting $ε\sim e^{-L/ξ}$ that provides topological protection also makes the qubit vulnerable to low-frequency noise. From a microscopic local interaction, we derive the effective low-energy coupling between the Majorana parity operator and a bosonic field; the coupling strength itself is proportional to $ε$, reflecting the qubit's non-local nature. The resulting pure-dephasing rate scales as $Γ_ϕ\propto ε^2 S(ε)$, with $S(ε)$ the environmental noise power at frequency $ε$. In the experimentally relevant high-temperature regime ($k_B T \gtrsim \hbarε$), this gives $Γ_ϕ\propto ερ(ε) T$, where $ρ(ε)$ is the environmental density of states. By engineering an environment with a suppressed low-frequency density of states, $ρ_{\text{eng}}(ω) = ρ_0 (ω/ω_c)^α$ for $ω< ω_c$ ($α> 0$), the dephasing rate drops to $Γ_ϕ^{\text{eng}} \propto ε^{α+1} \propto e^{-(α+1)L/ξ}$. Thus, longer wires yield exponentially better coherence---a direct synergy with topological protection. This "inverse Purcell" effect, which suppresses the density of states at the qubit frequency, provides a quantitative design principle for environmental engineering. Our work establishes spectral density shaping as a practical method for enhancing coherence in topological quantum devices.

cond-mat.mes-hall↗
arXiv2026

Axionic tunneling from a topological Kondo insulator

Discoveries over the past two decades have revealed the remarkable ability of quantum materials to emulate relativistic properties of the vacuum, from Dirac cones in graphene to Dirac surface states of topological insulators. Yet one of the most elusive consequences of topology in quantum matter -- the axionic ${\bf E}\cdot{\bf B}$ contribution to the electromagnetic response, predicted to produce strong magnetoelectric effects -- remains experimentally challenging to detect. Here we report evidence for an axion-like magnetoelectric response obtained through scanning tunneling microscopy (STM) using a SmB$_6$ nanowire tip on an antiferromagnetic Fe$_{1+x}$Te sample. Our measurements reveal a striking voltage-induced magnetization: millivolt biases generate measurable tip magnetizations that reverse with the voltage. The magnitude, tunability, and reversibility of this signal are consistent with an axion-like ${\bf E} \cdot {\bf B}$ coupling, which naturally accounts for the voltage-odd magnetic component of the tip spectral function while strongly constraining a conventional static-magnetism interpretation. Moreover, millivolt-scale control of spin polarization in a tunnel junction provides a new route for probing axionic electrodynamics and opens avenues for future STM and spintronic applications.

cond-mat.mes-hall↗
arXiv2026

Exciton-mediated optical control of liquid-solid friction

Interfacial friction in nanofluidic systems can arise from fluctuation-induced coupling between liquid charge fluctuations and the internal excitations of the confining solid. Here, we develop a microscopic theory of exciton-mediated solid-liquid friction based on the coupling between optically generated excitons and charge fluctuations in water. We distinguish between static excitons, localized by disorder or functionalization, and dynamic excitons, which interact with water through polarization fluctuations. In both cases, we derive analytical formulas for the excitonic friction, which is experimentally tunable and can significantly reduce the slip length and thereby the hydraulic permeability of nanochannels. Applying our framework to carbon nanotubes, we quantitatively reproduce the recent measurements of Kistwal et al., showing a reduction of nanotube diffusion under optical excitation, without fitting parameters. More broadly, our results establish excitons as a mechanism to optically control nanofluidic transport and suggest that excitonic photoluminescence could provide an optical probe of flow velocity inside nanochannels.

cond-mat.mes-hall↗