High field response of gated graphene at THz frequencies

Hadi Razavipour; Hassan A. Hafez; Ibraheem Al-Naib; Wayne Yang; Pierre Lévesque; Abdeladim Guermoune; Francois Blanchard; Xin Chai; Denis Ferachou; Richard Martel; Michael Hilke; Marc M. Dignam; Tsuneyuki Ozaki; David G. Cooke

doi:10.1103/physrevb.92.245421

arXiv · 1508.00624

High field response of gated graphene at THz frequencies

Hadi Razavipour·Hassan A. Hafez·Ibraheem Al-Naib·Wayne Yang·Pierre Lévesque·Abdeladim Guermoune·Francois Blanchard·Xin Chai·Denis Ferachou·Richard Martel·Michael Hilke·Marc M. Dignam·Tsuneyuki Ozaki·David G. Cooke

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Abstract

We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This effect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite different, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

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Hadi Razavipour, Hassan A. Hafez, Ibraheem Al-Naib, Wayne Yang, Pierre Lévesque, Abdeladim Guermoune, Francois Blanchard, Xin Chai, Denis Ferachou, Richard Martel, Michael Hilke, Marc M. Dignam, Tsuneyuki Ozaki, David G. Cooke. 2015-08-03. High field response of gated graphene at THz frequencies. https://doi.org/10.1103/physrevb.92.245421

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