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arXiv · 1508.00300

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Yangyang Wang·Ruoxi Yang·Ruge Quhe·Hongxia Zhong·Linxiao Cong·Meng Ye·Zeyuan Ni·Zhigang Song·Jinbo Yang·Junjie Shi·Ju Li·Jing Lu
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Abstract

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

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Yangyang Wang, Ruoxi Yang, Ruge Quhe, Hongxia Zhong, Linxiao Cong, Meng Ye, Zeyuan Ni, Zhigang Song, Jinbo Yang, Junjie Shi, Ju Li, Jing Lu. 2015-08-03. Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?. https://doi.org/10.1039/c5nr06204g

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