Parallel Hall effect from 3D single-component metamaterials

Christian Kern; Muamer Kadic; Martin Wegener

doi:10.1063/1.4932046

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arXiv · 1507.04128

Parallel Hall effect from 3D single-component metamaterials

Christian Kern·Muamer Kadic·Martin Wegener

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Abstract

We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum that lead to unusual effective behavior of the classical Hall effect. Using an anisotropic structure, we numerically demonstrate a Hall voltage that is parallel---rather than orthogonal---to the external static magnetic-field vector ("parallel Hall effect"). The sign of this parallel Hall voltage can be determined by a structure parameter. Together with the previously demonstrated positive or negative orthogonal Hall voltage, we demonstrate four different sign combinations

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Christian Kern, Muamer Kadic, Martin Wegener. 2015-07-15. Parallel Hall effect from 3D single-component metamaterials. https://doi.org/10.1063/1.4932046

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