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arXiv · 1507.03900

Effect of Photon-Assisted Andreev Reflection in the Accuracy of a SINIS Turnstile

Angelo Di Marco·Ville F. Maisi·Frank W. J. Hekking·Jukka P. Pekola
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Abstract

We consider a hybrid single-electron transistor (SET) constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (S-I-N-I-S), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.

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Angelo Di Marco, Ville F. Maisi, Frank W. J. Hekking, Jukka P. Pekola. 2015-07-14. Effect of Photon-Assisted Andreev Reflection in the Accuracy of a SINIS Turnstile. https://doi.org/10.1103/physrevb.92.094514

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