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arXiv · 1507.00632

Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser

David S. Sukhdeo·Shashank Gupta·Krishna C. Saraswat·Birendra·Dutt·Donguk Nam
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Abstract

We theoretically investigate how the threshold of a Ge-on-Si laser can be minimized and how the slope efficiency can be maximized in presence of both biaxial tensile strain and n-type doping. Our finding shows that there exist ultimate limits beyond which point no further benefit can be realized through increased tensile strain or n-type doping. Here were quantify these limits, showing that the optimal design for minimizing threshold involves about 3.7% biaxial tensile strain and 2x1018 cm-3 n-type doping, whereas the optimal design for maximum slope efficiency involves about 2.3% biaxial tensile strain with 1x1019 cm-3 n-type doping. Increasing the strain and/or doping beyond these limits will degrade the threshold or slope efficiency, respectively.

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David S. Sukhdeo, Shashank Gupta, Krishna C. Saraswat, Birendra, Dutt, Donguk Nam. 2015-07-02. Ultimate Limit of Biaxial Tensile Strain and N-Type Doping for Realizing an Efficient Low-Threshold Ge Laser. https://doi.org/10.7567/jjap.55.024301

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