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arXiv · 1507.00585

Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer

Igor Rozhansky·Konstantin Denisov·Nikita Averkiev·Erkki Lahderanta
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Abstract

We present a theory that describes the appearance of circular polarization of the photoluminescence (PL) in ferromagnet-semiconductor hybrid heterostructures due to spin-dependent tunneling of photoexcited carriers from a quantum well into a magnetic layer. The theory succeeds in explaining the experimental data on time-resolved PL for heterostructures consisting of InGaAs-based quantum well (QW) and a spatially separated Mn $\delta$-layer. We show that the circular polarization of the PL originates from dynamic spin polarization of electrons due to spin-dependent leakage from the QW onto Mn donor states split by the exchange field of the ferromagnetic Mn delta-layer.

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Igor Rozhansky, Konstantin Denisov, Nikita Averkiev, Erkki Lahderanta. 2015-07-02. Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer. https://doi.org/10.1103/physrevb.92.125428

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