Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

Hasnain Ahmad; Jayasimha Atulasimha; Supriyo Bandyopadhyay

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arXiv · 1506.06838

Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

Hasnain Ahmad·Jayasimha Atulasimha·Supriyo Bandyopadhyay

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Abstract

Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically.

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Hasnain Ahmad, Jayasimha Atulasimha, Supriyo Bandyopadhyay. 2015-06-23. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation. https://arxiv.org/abs/1506.06838

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