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arXiv · 1506.03785

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors

Yuan Ren·Hongtao Yuan·Xiaoyu Wu·Zhuoyu Chen·Yoshihiro Iwasa·Yi Cui·Harold Y. Hwang·Keji Lai
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Abstract

Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in systems ranging from complex oxides to layered chalcogenides. Yet little is known microscopically when carriers are modulated in electrolyte-gated electric double-layer transistors (EDLTs) due to the technical challenge of imaging the buried electrolyte-semiconductor interface. Here, we demonstrate the real-space mapping of the channel conductance in ZnO EDLTs using a cryogenic microwave impedance microscope. A spin-coated ionic gel layer with typical thicknesses below 50 nm allows us to perform high resolution (on the order of 100 nm) sub-surface imaging, while maintaining the capability of inducing the metal-insulator transition under a gate bias. The microwave images vividly show the spatial evolution of channel conductance and its local fluctuations through the transition, as well as the uneven conductance distribution established by a large source-drain bias. The unique combination of ultra-thin ion-gel gating and microwave imaging offers a new opportunity to study the local transport and mesoscopic electronic properties in EDLTs.

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Yuan Ren, Hongtao Yuan, Xiaoyu Wu, Zhuoyu Chen, Yoshihiro Iwasa, Yi Cui, Harold Y. Hwang, Keji Lai. 2015-06-11. Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors. https://doi.org/10.1021/acs.nanolett.5b01631

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