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arXiv · 1506.03341

Resonant high harmonic generation in a ballistic graphene transistor with an AC driven gate

Y. Korniyenko·O. Shevtsov·T. Lofwander
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Abstract

We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier. Photon-assisted tunneling results in excitation of quasibound states at the barrier. Under resonance condition, the excitation of the quasibound states leads to promotion of higher-order sidebands and enhanced higher harmonics of the source-drain conductance. The resonances in the main transmission channel are of the Fano form, while they are of the Breit-Wigner form for sidebands. We discuss the possibility of utilizing the resonances in prospective ballistic high-frequency devices, in particular frequency multipliers.

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Y. Korniyenko, O. Shevtsov, T. Lofwander. 2015-06-10. Resonant high harmonic generation in a ballistic graphene transistor with an AC driven gate. https://doi.org/10.1103/physrevb.93.035435

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