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arXiv · 1506.01224

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Wendy E. Purches·Alessandro Rossi·Ruichen Zhao·Sergey Kafanov·Timothy L. Duty·Andrew S. Dzurak·Sven Rogge·Giuseppe C. Tettamanzi
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Abstract

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

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Wendy E. Purches, Alessandro Rossi, Ruichen Zhao, Sergey Kafanov, Timothy L. Duty, Andrew S. Dzurak, Sven Rogge, Giuseppe C. Tettamanzi. 2015-06-03. A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures. https://doi.org/10.1063/1.4928589

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