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arXiv · 1506.00606

A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction

Xiaoxian Song·Yating Zhang·Ran Wang·Mingxuan Cao·Yongli Che·Jianlong Wang·Haiyan Wang·Lufan Jin·Haitao Dai·Xin Ding·Guizhong Zhang·Jianquan Yao
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Abstract

As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still unknown. A comparison study is performed based on an MEH-PPV and PbS QDs hybrid.

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Xiaoxian Song, Yating Zhang, Ran Wang, Mingxuan Cao, Yongli Che, Jianlong Wang, Haiyan Wang, Lufan Jin, Haitao Dai, Xin Ding, Guizhong Zhang, Jianquan Yao. 2015-04-30. A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction. https://arxiv.org/abs/1506.00606

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