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arXiv · 1505.05453

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli·Maikel F. A. M. van Hest·Myles A. Steiner·Stephanie Essig·Emmett E. Perl·Andrew G. Norman·Nick Bosco·Paul Stradins
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Abstract

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100$^{\circ}$C to 350$^{\circ}$C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 $Ω$cm$^2$ for samples bonded at 200$^{\circ}$C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga$_{0.5}$In$_{0.5}$P/Si tandem solar cells operating at one sun or low concentration conditions.

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Adele C. Tamboli, Maikel F. A. M. van Hest, Myles A. Steiner, Stephanie Essig, Emmett E. Perl, Andrew G. Norman, Nick Bosco, Paul Stradins. 2015-06-12. III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers. https://arxiv.org/abs/1505.05453

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