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arXiv · 1505.04188

Interaction driven metal-insulator transition in strained graphene

Ho-Kin Tang·E. Laksono·J. N. B. Rodrigues·P. Sengupta·F. F. Assaad·S. Adam
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Abstract

The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between $π$-electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that without strain, graphene remains metallic and changing the substrate from SiO$_2$ to suspended samples hardly makes any difference. In contrast, applying a rather large -- but experimentally realistic -- uniform and isotropic strain of about $15\%$ seems to be a promising route to making graphene an antiferromagnetic Mott insulator.

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Ho-Kin Tang, E. Laksono, J. N. B. Rodrigues, P. Sengupta, F. F. Assaad, S. Adam. 2015-11-14. Interaction driven metal-insulator transition in strained graphene. https://doi.org/10.1103/physrevlett.115.186602

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