Direct and Scalable Chemical Vapor Deposition of Ultrathin Low-Noise MoS2 Membranes on Apertures

Pradeep Waduge; Ismail Bilgin; Joseph Larkin; Kenneth Goodfellow; Adam C. Graham; David C. Bell; Nick Vamivakas; Swastik Kar; Meni Wanunu

arXiv · 1505.02832

Direct and Scalable Chemical Vapor Deposition of Ultrathin Low-Noise MoS2 Membranes on Apertures

Pradeep Waduge·Ismail Bilgin·Joseph Larkin·Kenneth Goodfellow·Adam C. Graham·David C. Bell·Nick Vamivakas·Swastik Kar·Meni Wanunu

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Abstract

We show that atomically thin molybdenum disulfide (MoS2) crystals can grow without any underlying substrates into free-standing atomically-thin layers, maintaining their planar 2D form. Using this property, we present a new mechanism for 2D crystal synthesis, i.e. reagent-limited nucleation near an aperture edge followed by reactions that allow crystal growth into the free-space of the aperture. Such an approach enables us, for the first time, the direct and selective growth of freestanding membranes of atomically thin MoS2 layers across micrometer-scale pre-fabricated solid-state apertures in SiNx membranes. Under optimal conditions, MoS2 grows preferentially across apertures, resulting in sealed membranes that are one to a few atomic layers thick. Since our method involves free-space growth and is devoid of either substrates or transfer, it is conceivably the most contamination-free method for obtaining 2D crystals reported so far. The membrane quality was investigated using atomic-resolution transmission electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, and low-noise ion-current recordings through nanopores fabricated in such membranes.

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Pradeep Waduge, Ismail Bilgin, Joseph Larkin, Kenneth Goodfellow, Adam C. Graham, David C. Bell, Nick Vamivakas, Swastik Kar, Meni Wanunu. 2015-05-11. Direct and Scalable Chemical Vapor Deposition of Ultrathin Low-Noise MoS2 Membranes on Apertures. https://arxiv.org/abs/1505.02832

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