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arXiv · 1505.02503

Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser

Nitzan Akerman·Nir Navon·Shlomi Kotler·Yinnon Glickman·Roee Ozeri
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Abstract

We report on the implementation of a high fidelity universal gate-set on optical qubits based on trapped $^{88}$Sr$^+$ ions for the purpose of quantum information processing. All coherent operations were performed using a narrow linewidth diode laser. We employed a master-slave configuration for the laser, where an ultra low expansion glass (ULE) Fabry-Perot cavity is used as a stable reference as well as a spectral filter. We characterized the laser spectrum using the ions with a modified Ramsey sequence which eliminated the affect of the magnetic field noise. We demonstrated high fidelity single qubit gates with individual addressing, based on inhomogeneous micromotion, on a two-ion chain as well as the Mølmer-Sørensen two-qubit entangling gate.

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Nitzan Akerman, Nir Navon, Shlomi Kotler, Yinnon Glickman, Roee Ozeri. 2015-05-11. Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser. https://doi.org/10.1088/1367-2630%2F17%2F11%2F113060

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