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Decrease of heavy-hole exciton mass induced by uniaxial stress in GaAs/AlGaAs quantum well

D. K. Loginov·P. S. Grigoryev·E. V. Ubiyvovk·Yu. P. Efimov·S. A. Eliseev·V. A. Lovtcius·Yu. P. Petrov·I. V. Ignatiev
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Abstract

It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated as the stress-induced decrease of the heavy-hole exciton mass. Theoretical modeling of the effect supports this assumption. The 5\%-decrease of the exciton mass is obtained at pressure P=0.23 GPa.

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D. K. Loginov, P. S. Grigoryev, E. V. Ubiyvovk, Yu. P. Efimov, S. A. Eliseev, V. A. Lovtcius, Yu. P. Petrov, I. V. Ignatiev. 2015-05-08. Decrease of heavy-hole exciton mass induced by uniaxial stress in GaAs/AlGaAs quantum well. https://doi.org/10.1002/pssb.201552735

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