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arXiv · 1505.01880

Phonon-thermoelectric transistors and rectifiers

Jian-Hua Jiang·Manas Kulkarni·Dvira Segal·Yoseph Imry
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Abstract

We describe nonlinear phonon-thermoelectric devices where charge current and electronic and phononic heat currents are coupled, driven by voltage and temperature biases, when phonon-assisted inelastic processes dominate the transport. Our thermoelectric transistors and rectifiers can be realized in a gate-tunable double quantum-dot system embedded in a nanowire which is realizable within current technology. The inelastic electron-phonon scattering processes are found to induce pronounced charge, heat, and cross rectification effects, as well as a thermal transistor effect that, remarkably, can appear in the present model even in the linear-response regime without relying on negative differential thermal conductance.

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Jian-Hua Jiang, Manas Kulkarni, Dvira Segal, Yoseph Imry. 2015-05-07. Phonon-thermoelectric transistors and rectifiers. https://doi.org/10.1103/physrevb.92.045309

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