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arXiv · 1504.07155

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas

Likai Li·Fangyuan Yang·Guo Jun Ye·Zuocheng Zhang·Zengwei Zhu·Wen-Kai Lou·Liang Li·Kenji Watanabe·Takashi Taniguchi·Kai Chang·Yayu Wang·Xian Hui Chen·Yuanbo Zhang
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Abstract

Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems. Significant progress has been made to achieve high mobility black phosphorus two-dimensional electron gas (2DEG) since the development of the first black phosphorus field-effect transistors (FETs)$^{1-4}$. Here, we reach a milestone in developing high quality black phosphorus 2DEG - the observation of integer quantum Hall (QH) effect. We achieve high quality by embedding the black phosphorus 2DEG in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DEG, and brings the carrier Hall mobility up to 6000 $cm^{2}V^{-1}s^{-1}$. The exceptional mobility enabled us, for the first time, to observe QH effect, and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

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Likai Li, Fangyuan Yang, Guo Jun Ye, Zuocheng Zhang, Zengwei Zhu, Wen-Kai Lou, Liang Li, Kenji Watanabe, Takashi Taniguchi, Kai Chang, Yayu Wang, Xian Hui Chen, Yuanbo Zhang. 2015-05-19. Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas. https://doi.org/10.1038/nnano.2016.42

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