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arXiv · 1504.03310

Anisotropic magnetoresistance driven by surface spin orbit scattering

Steven S. -L. Zhang·Giovanni Vignale·Shufeng Zhang
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Abstract

In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM), interfacial spin orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance (AMR). We theoretically investigate the magnetotransport in such bilayer structures by solving the spinor Boltzmann transport equation with generalized Fuchs-Sondheimer boundary condition that takes into account the effect of spin orbit scattering at the interface. We find that the new AMR exhibits a peculiar angular dependence which can serve as a genuine experimental signature. We also determine the dependence of the AMR on film thickness as well as spin polarization of the FM.

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Steven S. -L. Zhang, Giovanni Vignale, Shufeng Zhang. 2015-04-13. Anisotropic magnetoresistance driven by surface spin orbit scattering. https://doi.org/10.1103/physrevb.92.024412

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