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arXiv · 1503.08442

Impact of the Topological Surface State on the Thermoelectric Transport in Sb$_2$Te$_3$ Thin Films

Nicki F. Hinsche·Sebastian Zastrow·Johannes Gooth·Laurens Pudewill·Robert Zierold·Florian Rittweger·Tomáš Rauch·Jürgen Henk·Kornelius Nielsch·Ingrid Mertig
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Abstract

Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the ther- mopower are computed in the diffusive limit of transport based on the Boltzmann equation. Contributions of the bulk and the surface to the transport coefficients are separated which enables to identify a clear impact of the topological surface state on the thermoelectric properties. By tuning the charge carrier concentration, a crossover between a surface-state-dominant and a Fuchs-Sondheimer transport regime is achieved. The calculations are corroborated by thermoelectric transport measurements on Sb$_2$Te$_3$ films grown by atomic layer deposition.

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Nicki F. Hinsche, Sebastian Zastrow, Johannes Gooth, Laurens Pudewill, Robert Zierold, Florian Rittweger, Tomáš Rauch, Jürgen Henk, Kornelius Nielsch, Ingrid Mertig. 2015-03-29. Impact of the Topological Surface State on the Thermoelectric Transport in Sb$_2$Te$_3$ Thin Films. https://doi.org/10.1021/acsnano.5b00896

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