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arXiv · 1503.07832

Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off

N. Kinsey·C. DeVault·J. Kim·M. Ferrera·V. M. Shalaev·A. Boltasseva
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Abstract

Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near infrared and infrared. However, despite all these beneficial features, the slow (> 100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limitation impeding ultrafast optical modulation. Here we report the first epsilon-near-zero AZO thin films which simultaneously exhibit ultra-fast carrier dynamics (excitation and recombination time below 1 ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels (< 4 mJ/cm2) at the telecom wavelength of 1.3 {\mu}m. The unique properties of the demonstrated AZO thin films are the result of a low temperature fabrication procedure promoting oxygen vacancies and an ultra-high carrier concentration. As a proof-of-concept, an all-optical AZO-based plasmonic modulator achieving 3 dB modulation in 7.5 {\mu}m and operating at THz frequencies is numerically demonstrated. Our results overcome the traditional "modulation depth vs. speed" trade-off by at least an order of magnitude, placing AZO among the most promising compounds for tunable/switchable nanophotonics.

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N. Kinsey, C. DeVault, J. Kim, M. Ferrera, V. M. Shalaev, A. Boltasseva. 2015-03-26. Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off. https://doi.org/10.1364/optica.2.000616

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