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arXiv · 1503.07392

Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts

Yexin Deng·Nathan J. Conrad·Zhe Luo·Han Liu·Xianfan Xu·Peide D. Ye
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Abstract

The metal contacts on 2D black phosphorus field-effect transistor and photodetectors are studied. The metal work functions can significantly impact the Schottky barrier at the metal-semiconductor contact in black phosphorus devices. Higher metal work functions lead to larger output hole currents in p-type transistors, while ambipolar characteristics can be observed with lower work function metals. Photodetectors with record high photoresponsivity (223 mA/W) are demonstrated on black phosphorus through contact-engineering.

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Yexin Deng, Nathan J. Conrad, Zhe Luo, Han Liu, Xianfan Xu, Peide D. Ye. 2015-03-25. Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts. https://doi.org/10.1109/iedm.2014.7046987

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