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arXiv · 1503.05862

Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

X. Mi·T. M. Hazard·C. Payette·K. Wang·D. M. Zajac·J. V. Cady·J. R. Petta
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Abstract

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.

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X. Mi, T. M. Hazard, C. Payette, K. Wang, D. M. Zajac, J. V. Cady, J. R. Petta. 2015-03-19. Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures. https://doi.org/10.1103/physrevb.92.035304

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