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arXiv · 1503.05592

Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Yu-Chuan Lin·Ram Krishna Ghosh·Rafik Addou·Ning Lu·Sarah M. Eichfeld·Hui Zhu·Ming-Yang Li·Xin Peng·Moon J. Kim·Lain-Jong Li·Robert M. Wallace·Suman Datta·Joshua A. Robinson
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Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics.

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Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming-Yang Li, Xin Peng, Moon J. Kim, Lain-Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson. 2015-03-18. Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures. https://doi.org/10.1038/ncomms8311

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