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arXiv · 1503.04312

Transport and particle-hole asymmetry in graphene on boron nitride

Ashley M. DaSilva·Jeil Jung·Shaffique Adam·Allan H. MacDonald
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Abstract

All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moir\'e patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a previously derived effective Hamiltonian for the $\pi$-bands of graphene on h-BN to address the carrier-dependence of transport properties, concentrating on the conductivity features at four electrons and four holes per unit cell. These transport features measure the strength of Bragg scattering of $\pi$-electrons off the moir\'e pattern, and exhibit a striking particle-hole asymmetry that we trace to specific features of the effective Hamiltonian that we interpret physically.

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Ashley M. DaSilva, Jeil Jung, Shaffique Adam, Allan H. MacDonald. 2015-03-14. Transport and particle-hole asymmetry in graphene on boron nitride. https://doi.org/10.1103/physrevb.91.245422

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