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arXiv · 1503.00392

Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films

Yande Que·Yong Zhang·Yeliang Wang·Li Huang·Wenyan Xu·Jing Tao·Lijun Wu·Yimei Zhu·Kisslinger Kim·Michael Weinl·Matthias Schreck·Chengmin Shen·Shixuan Du·Yunqi Liu·H. -J. Gao
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Abstract

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic technique, showing high promise for applications in future micro- and nano-electronic devices.

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Yande Que, Yong Zhang, Yeliang Wang, Li Huang, Wenyan Xu, Jing Tao, Lijun Wu, Yimei Zhu, Kisslinger Kim, Michael Weinl, Matthias Schreck, Chengmin Shen, Shixuan Du, Yunqi Liu, H. -J. Gao. 2015-03-02. Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films. https://doi.org/10.1002/admi.201400543

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