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arXiv · 1502.06154

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Weiyi Wang·Awadhesh Narayan·Lei Tang·Kapildeb Dolui·Yanwen Liu·Xiang Yuan·Yibo Jin·Yizheng Wu·Ivan Rungger·Stefano Sanvito·Faxian Xiu
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Abstract

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

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Weiyi Wang, Awadhesh Narayan, Lei Tang, Kapildeb Dolui, Yanwen Liu, Xiang Yuan, Yibo Jin, Yizheng Wu, Ivan Rungger, Stefano Sanvito, Faxian Xiu. 2015-02-22. Spin-valve Effect in NiFe/MoS2/NiFe Junctions. https://doi.org/10.1021/acs.nanolett.5b01553

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