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arXiv · 1502.01239

A Pathway between Bernal and Rhombohedral Stacked Graphene Layers with Scanning Tunneling Microscopy

P. Xu·Y. Yang·D. Qi·S. D. Barber·M. L. Ackerman·J. K. Schoelz·T. B. Bothwell·S. Barraza-Lopez·L. Bellaiche·P. M. Thibado
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Abstract

Horizontal shifts in the top layer of highly oriented pyrolytic graphite, induced by a scanning tunneling microscope (STM) tip, are presented. Excellent agreement is found between STM images and those simulated using density functional theory. First-principle calculations identify that the low-energy barrier direction of the top layer displacement is toward a structure where none of the carbon pz orbitals overlap, while the high-energy barrier direction is toward AA stacking. Each directional shift yields a real-space surface charge density similar to graphene; however the low-energy barrier direction requires only one bond length to convert ABA (Bernal) to ABC (rhombohedral).

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P. Xu, Y. Yang, D. Qi, S. D. Barber, M. L. Ackerman, J. K. Schoelz, T. B. Bothwell, S. Barraza-Lopez, L. Bellaiche, P. M. Thibado. 2015-02-04. A Pathway between Bernal and Rhombohedral Stacked Graphene Layers with Scanning Tunneling Microscopy. https://arxiv.org/abs/1502.01239

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