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arXiv · 1501.01911

Silicene Nanomesh

Feng Pan·Yangyang Wang·Kaili Jiang·Zeyuan Ni·Jianhua Ma·Jiaxin Zheng·Ruge Quhe·Junjie Shi·Jinbo Yang·Changle Chen·Jing Lu
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Abstract

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

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Feng Pan, Yangyang Wang, Kaili Jiang, Zeyuan Ni, Jianhua Ma, Jiaxin Zheng, Ruge Quhe, Junjie Shi, Jinbo Yang, Changle Chen, Jing Lu. 2015-01-08. Silicene Nanomesh. https://doi.org/10.1038/srep09075

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