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arXiv · 1501.00143

Origins of GaN(0 0 0 1) surface reconstructions

S. Vezian·F. Semond·J. Massies·D. W. Bullock·Z. Ding·P. M. Thibado
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Abstract

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy.

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S. Vezian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, P. M. Thibado. 2014-12-31. Origins of GaN(0 0 0 1) surface reconstructions. https://doi.org/10.1016/s0039-6028(03)00950-6

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