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arXiv · 1412.1946

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

Inga Anita Fischer·Li-Te Chang·Christoph Sürgers·Erlend Rolseth·Sebastian Reiter·Stefan Stefanov·Stefano Chiussi·Jianshi Tang·Kang L. Wang·Jörg Schulze
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Abstract

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

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Inga Anita Fischer, Li-Te Chang, Christoph Sürgers, Erlend Rolseth, Sebastian Reiter, Stefan Stefanov, Stefano Chiussi, Jianshi Tang, Kang L. Wang, Jörg Schulze. 2014-12-05. Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si. https://doi.org/10.1063/1.4903233

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