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arXiv · 1411.7044

n-Type Chalcogenides by Ion Implantation

Mark A. Hughes·Yanina Fedorenko·Behrad Gholipour·Jin Yao·Tae-Hoon Lee·Russell M. Gwilliam·Kevin P. Homewood·Steven Hinder·Daniel W. Hewak·Stephen R. Elliott·Richard J. Curry
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Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb doping concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

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Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour, Jin Yao, Tae-Hoon Lee, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak, Stephen R. Elliott, Richard J. Curry. 2014-11-20. n-Type Chalcogenides by Ion Implantation. https://doi.org/10.1038/ncomms6346

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