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arXiv · 1410.2563

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Lingming Yang·Kausik Majumdar·Han Liu·Yuchen Du·Heng Wu·Michael Hatzistergos·P. Y. Hung·Robert Tieckelmann·Wilman Tsai·Chris Hobbs·Peide D. Ye
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Abstract

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.

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Lingming Yang, Kausik Majumdar, Han Liu, Yuchen Du, Heng Wu, Michael Hatzistergos, P. Y. Hung, Robert Tieckelmann, Wilman Tsai, Chris Hobbs, Peide D. Ye. 2014-10-09. Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2. https://doi.org/10.1021/nl502603d

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