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arXiv · 1409.6752

Afterpulsing model based on the quasi-continuous distribution of deep levels in single-photon avalanche diodes

D. B. Horoshko·V. N. Chizhevsky·S. Ya. Kilin
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Abstract

We have performed a statistical characterization of the effect of afterpulsing in a free-running silicon single-photon detector by measuring the distribution of afterpulse waiting times in response to pulsed illumination and fitting it by a sum of exponentials. We show that a high degree of goodness of fit can be obtained for 5 exponentials, but the physical meaning of estimated characteristic times is dubious. We show that a continuous limit of the sum of exponentials with a uniform density between the limiting times gives excellent fitting results in the full range of the detector response function. This means that in certain detectors the afterpulsing is caused by a continuous band of deep levels in the active area of the photodetector.

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D. B. Horoshko, V. N. Chizhevsky, S. Ya. Kilin. 2014-09-23. Afterpulsing model based on the quasi-continuous distribution of deep levels in single-photon avalanche diodes. https://doi.org/10.1080/09500340.2016.1220643

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