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arXiv · 1409.4949

In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3

Sumeet Walia·Hussein Nili·Sivacarendran Balendhran·Dattatray J. Late·Sharath Sriram·Madhu Bhaskaran
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Abstract

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&Os, and understanding the interactions of the atomic electronic states in such layered materials.

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Sumeet Walia, Hussein Nili, Sivacarendran Balendhran, Dattatray J. Late, Sharath Sriram, Madhu Bhaskaran. 2014-09-17. In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3. https://arxiv.org/abs/1409.4949

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